Article title |
Year |
Comparative study of the self-heating effect in the accumulation and inversion mode FinFETs
AE Atamuratov, BO Jabbarova, ES Xaitbayev, DR Rajapov, MM Khalilloev arXiv preprint arXiv:2402.10858, | 2024 |
OKSIDDA QAMRALGAN LOKAL ZARYADNING VERTIKAL IZOLYATSIYALANGAN ZATVORLI MAYDONIY TRANZISTOR ZATVOR-ISTOK (STOK) SIG ‘IMIGA TA’SIRI.
I Karimov, M Foziljonov, A Abdikarimov, A Atamuratov И ПРИКЛАДНЫЕ ПРОБЛЕМЫ СОВРЕМЕННОЙ ФИЗИКИ FUNDAMENTAL AND APPLIED PROBLEMS …, | 2023 |
2D MOS2–MOYa TRANZISTORDA O ‘ZO ‘ZIDAN QIZISH EFFEKTI VA XARAKTERISTIKA QIYALIGINING OKSID MATERIALLARGA BOG ‘LIQLIGI
X Saparov, E Xaitbayev, S Salohiddin, B Allaberganova, A Atamuratov И ПРИКЛАДНЫЕ ПРОБЛЕМЫ СОВРЕМЕННОЙ ФИЗИКИ FUNDAMENTAL AND APPLIED PROBLEMS …, | 2023 |
Optimization of vertically stacked nanosheet FET immune to self-heating
M Balasubbareddy, K Sivasankaran, AE Atamuratov, MM Khalilloev Micro and Nanostructures 182, 207633, | 2023 |
The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration
AE Atamuratov, BQ Jumaboyev, AE Abdikarimov, A Yusupov, ... 14th Spanish Conference on Electron Devices (CDE), 1-4, | 2023 |
Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs
AE Atamuratov, KS Saparov, A Yusupov, JC Chedjou Applied Sciences 13 (10), 6131, | 2023 |
Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos2 Based Mosfet
AEE Atamuratov, KS Saparov, AY Yusupov, JC Chedjou Preprints, | 2023 |
The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration
AE Atamuratov, BQ Jumaboyev, A Yusupov, AE Abdikarimov, AG Loureiro International Conference on Information Science and Communications …, | 2022 |
Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials
AE Atamuratov, XS Saparov, JC Chedjou, A Yusupov, K Kyamakya International Conference on Information Science and Communications …, | 2022 |
Memristors: types, characteristics and prospects of use as the main element of the future artificial intelligence
A Yusupov, AE Atamuratov, AE Abdikarimov, TA Atamuratov, KA Sattarov, ... International Conference on Information Science and Communications …, | 2022 |
Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET
AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, ... Наносистемы: физика, химия, математика 13 (2), 148-155, | 2022 |
The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS2 based MOSFET
AE Atamuratov, XS Saparov, TA Atamuratov, A Yusupov, F Schwierz International Conference on Information Science and Communications …, | 2021 |
The self-heating effect in junctionless fin field-effect transistors based on silicon-on-insulator structures with different channel shapes
AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov Technical Physics Letters 47 (7), 542-545, | 2021 |
Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries
AE Atamuratov, BO Jabbarova, MM Khalilloev, A Yusupov, AG Loureriro 13th Spanish Conference on Electron Devices (CDE), 62-65, | 2021 |
Amplitude of Random Telegraph Noise in Junctionless FinFET with Different Channel Shape
AE Atamuratov, MM Khalilloev, A Yusupov, JC Chedjou, K Kyamakya e-Journal of Surface Science and Nanotechnology 19, 9-12, | 2021 |
Simulation of self-heating effect in MOSFET based on 2D MoS2
AE Atamuratov, XSH Saparov, A Yusupov, F Schwierz Scientific Bulletin. Physical and Mathematical Research 3 (1), 29-34, | 2021 |
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov, AJ García-Loureiro, ... Applied Sciences 10 (15), 5327, | 2020 |
The amplitude of RTN in nanometer SOI FinFET with different channel shape.
A Yusupov, AE Atamuratov, AE Abdikarimov, JC Chedjou, K Kyamakya World Scientific Proceedings Series on Computer Engineering and Information …, | 2020 |
Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection
JCCKK Atabek E. Atamuratov, Ahmed Yusupov, Zukhra A. Atamuratova Applied Sciences 10 (21), 7935-7944, | 2020 |
Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer
ZA Atamuratova, A Yusupov, BO Khalikberdiev, AE Atamuratov Technical Physics 64, 1006-1009, | 2019 |
Influence of a lateral gate extension on short-channel effects in nanometer SOI FinFET transistor
AE Abdikarimov, AE Atamuratov, A Yusupov Uzbekiston Fizika Zhurnali 21 (1), 50-52, | 2019 |
Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer
AE Atamuratov, ZA Atamuratova, A Yusupov, A Ghani Results in Physics 11, 656-658, | 2018 |
New fast method for reading charge bit stored in MNOSFET
AE Atamuratov, ZA Atamuratova, A Yusupov
| 2018 |
The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET
AE Abdikarimov, A Yusupov, AE Atamuratov Technical Physics Letters 44, 962-964, | 2018 |
INTERCAPACITANCE BETWEEN TWO CHARGES LOCATED IN THE DIFFERENT ENVIRONMENTS
AE Abdikarimov, A Yusupov, AE Atamuratov Central Asian Problems of Modern Science and Education 3 (4), 33-37, | 2018 |
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
AE Atamuratov, M Khalilloev, A Abdikarimov, ZA Atamuratova, M Kittler, ... Наносистемы: физика, химия, математика 8 (1), 75-78, | 2017 |
Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes
AE Atamuratov, A Abdikarimov, M Khalilloev, ZA Atamuratova, ... Наносистемы: физика, химия, математика 8 (1), 71-74, | 2017 |
The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat
E Atamuratov, UA Aminov, ZA Atamuratova, M Halillaev, A Abdikarimov, ... Наносистемы: физика, химия, математика 6 (6), 837-842, | 2015 |
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
A Abdikarimov, G Indalecio, E Comesaña, AJ Garcia-Loureiro, N Seoane, ... International Workshop on Computational Electronics (IWCE), 1-4, | 2014 |
Simulation of random telegraph noise in nanometer nMOSFET induced by interface and oxide trapped charge
AE Atamuratov, R Granzner, M Kittler, Z Atamuratova, M Halillaev, ... Low-Dimensional Functional Materials, 243-249, | 2013 |
Simulation of carrier distribution in nanometer nMOSFET with single charge trapped in oxide and at Si-SiO2 -interface
AE Atamuratov, Z Atamuratova, M Halillaev, G Ghione
| 2012 |
Prospects for biomass as a of renewable energy source in rural areas in Uzbekistan
AE Atamuratov, S Ismailov, D Saidov, U Aminov
| 2012 |
Simulation of the built-in oxide charge influence on the carrier concentration distribution in the substrate of MOSFET structures
AE Atamuratov, H Abdikarimov, E Comesana, R Valin, A Garcia-Loureiro
| 2010 |
Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity
JD Wei, SF Li, A Atamuratov, HH Wehmann, A Waag Applied Physics Letters 97 (17), | 2010 |
Influence of the Field of the Built_in Oxide Charge on the Lateral C–V Dependence of the MOSFET
AE Atamuratov, DY Matrasulov, PK Khabibullaev Doklady Physics 55 (2), 52-54, | 2010 |
Simulation of influence of the charge embedded in the oxide layer on the lateral CV characteristic of coaxial MOSFET; Modelirovanie vliyaniya zaryada, vstroennogo v oksidnyj …
AE Atamuratov, DU Matrasulov Uzbekiston Fizika Zhurnali 11, | 2009 |
Tunable SiO2/Si-based nanostructures
AN Georgobiani, AE Atamuratov, UA Aminov, TA Atamuratov Inorganic Materials 45, 900-904, | 2009 |
Modelling of Quantum Wires in the Interface Layer of the Semiconductor-Oxide Structures with Charge Built in Oxide
AE Atamuratov Complex Phenomena in Nanoscale Systems, 229-236, | 2009 |
Simulation of influence of the charge embedded in the oxide layer on the lateral CV characteristic of coaxial MOSFET
AE Atamuratov, DU Matrasulov Uzbekiston Fizika Zhurnali 11 (5-6), 351-354, | 2009 |
Modeling of lateral CV dependence of coaxial MOSFET with built-in charge in oxide layer
AE Atamuratov
| 2007 |
Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement
AE Atamuratov, DU Matrasulov, PK Khabibullaev Doklady Physics 52, 322-325, | 2007 |
Determination of the longitudinal charge distribution at the Si-SiO2 interface of MOSFET by C-V measurements
AE Atamuratov, HH Wehmann
| 2004 |
The method of charge image reading on the surface of semiconductor by lateral capacitive measurement; Metod chteniya zaryadovykh izobrazhenij na poverkhnosti poluprovodnika …
AE Atamuratov
| 2004 |
The method of charge image reading on the surface of semiconductor by lateral capacitive measurement
AE Atamuratov
| 2004 |
'Scanning' of nonuniform charge distribution on Si-SiO2 interface of the MOS-transistor by capacitance measurements
AE Atamuratov
| 2004 |
Influence of the high-energy Bremsstrahlung on field transistor threshold voltage
A Atamuratov Uzbekiston Fizika Zhurnali 5, | 2004 |
Radiation induced localization of a charge in limited space of oxide layer in MOS transistor
AE Atamuratov, A Yusupov, A Kashetov, D Saidov, K Rusimov
| 2003 |
The technique for estimation of linear dimensions of the zone of inhomogeneous distribution of charge in boundary Si-SiO {sub 2} of MOS transistor; Sposob otsenki linejnogo …
AE Atamuratov, A Yusupov, K Babajanov
| 2003 |
Peculiarities of the effect of inhomogeneous distribution of charge of sublock oxide on the capacity characteristics of silicon MOS-transistor; Osobennosti vliyaniya …
AE Atamuratov, A Yusupov, K Bobojonov, D Saidov, K Ruzimov
| 2002 |
Experimental assessment of the nonuniform radiation-induced space-charge distribution in the surface region of silicon
AE Atamuratov, A Yusupov, K Adinaev Inorganic materials 37 (8), 767-768, | 2001 |
Experimental assessment of the nonuniform radiation-induced space-charge distribution in the surface region of silicon
AE Atamuratov, A Yusupov, K Adinaev Inorganic materials 37 (8), 767-768, | 2001 |
Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor
AÉ Atamuratov, SZ Zainabidinov, A Yusupov, KS Daliev, KM Adinaev Technical Physics 42 (9), 1106-1107, | 1997 |
Effect of thermo-field treatment and ionizing radiation on energy spectrum of surface states on the interface of Si-SiO {sub 2} MOS transistor; Vliyanie termopolevoj obrabotki …
AE Atamuratov, SZ Zajnabidinov, A Yusupov, KS Daliev, KM Adinaev Zhurnal Tekhnicheskoj Fiziki 67, | 1997 |
The influence of Co {sup 60} quanta on current characteristics of rectifier columns on the base of silicon; Vliyaniya kvantov Co {sup 60} na tokovye kharakteristiki …
G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva
| 1995 |
The peculiarities of the change of the spectrum of surface states on the inter-phase boundary Si-SiO {sub 2} of MOS-transistor after ionizing irradiation and thermal treatment …
SZ Zajnabidinov, KS Daliev, AE Atamuratov, K Adinaev
| 1995 |
The influence of Co60 quanta on current characteristics of rectifier columns on the base of silicon
G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva
| 1995 |
Effect of the generation of surface states of Si-SiO2 interface boundary on the current of MOS-transistor dispersion
AE Atamuratov, KS Daliev, SZ Zainabidinov, AY Yusupov, KM Adinaev PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 21 (21), 79-83, | 1995 |
Influence of surface states generated at the Si-SiO2 interphase boundary on the leakage current of a MOS transistor
AE Atamuratov, KS Daliev, SZ Zainabidinov, AY Yusupov, KM Adinaev Technical Physics Letters 21 (11), 897-898, | 1995 |
MOS transistor leak current and the status of Si-SiO2 interphase boundary
AE Atamuratov, AE Daliev, SZ Zainabidinov, AY Yusupov PISMA V ZHURNAL TEKHNICHESKOI FIZIKI 21 (4), 75-78, | 1995 |
Leakage current of an MOS transistor and the state of the Si-SiO2 interface
AÉ Atamuratov, AÉ Daliev, SZ Zainabidinov, AY Yusupov Technical Physics Letters 21 (2), 163-164, | 1995 |
Leakage current of an MOS transistor and the state of the Si-SiO (sub 2) interface
AE Atamuratov, AE Daliev, SZ Zainabidinov, A Yu Yusupov Technical Physics Letters 21 (2), 75-80, | 1995 |
Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors; O roli tormoznogo izlucheniya v protsessakh radiatsionnogo …
AE Atamuratov, KS Daliev, SZ Zajnabidinov Uzbekiston Fizika Zhurnali 3, | 1992 |
Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors
AE Atamuratov, KS Daliev, SZ Zajnabidinov Uzbekiston Fizika Zhurnali 3, 34-37, | 1992 |
CHEMISTRY AND MATERIAL SCIENCE
AE Atamuratov, M Khalilloev, A Abdikarimov, ZA Atamuratova, M Kittler, ...
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