Article title |
Year |
Low Energy Ar+ Ions Scattering from SiO2 (001)<Ῑ10> Surface under Grazing Incidence
AS Ashirov, UO Kutliev, S Xakimov, SK Ismailov Materials Science Forum on January 11, 1049 (), 152-157, | 2022 |
Semiconductor solid solutions Ge1-x Snx as a new material for electronics
AS Saidov, SK Ismailov, UP Asatova Published in International Conference on Information Science and …, | 2021 |
КОМПЬЮТЕРНОЕ МОДЕЛИРОВАНИЯ МАЛОУГЛОВОЕ РАССЕЯНИЯ ИОНОВ AR С ДЕФЕКТНОЙ ПОВЕРХНОСТИ INP(001)
БА Ш.К. Исмаилов, М.К. Каримов, У.О. Кутлиев М.У. Отабаев, Ф.Р. Садуллаева Acta of Turin Polytechnic University in Tashkent 10 (2), 14-16, | 2020 |
IMITATION MODELING THE DISCRE TION MODELING THE DISCRETE COMMUNICA TE COMMUNICATION CHANEL IN M ANEL IN MATLAB STATEFLOW ON BASIS OF PE OW ON BASIS OF PETROVICH MODEL
IsmailovSh, OII Djabborov Sh.Y. Chemical Technology, Control and Management 5 (), 201-209, | 2020 |
Low Energy Ar+ Ion Scattering on InGaP(001) Surface
S Ismailov, U Karimov, M, Kutliev, M Otabaev e-Journal of Surface Science and Nanotechnology 18, 164-167, | 2020 |
Modeling Discrete Channels Based on Gilbert Model using MATLAB Software
T Rakhimov, S Ismailov, U Matyokubov, U Eschanov, V Kuchkarov International Journal of Engineering and Advanced Technology (IJEAT) 9 (2 …, | 2019 |
Growing and Studying The Photoelectric and Electrical Properties of Epitaxial Films of Ge1-X Snx Solid Solutions
A Saidov, SN Usmonov, U Asatova, SK Ismailov Acta of Turin Polytechnic University in Tashkent 9 (1), 93-100, | 2019 |
Жидкофазная эпитаксия твердых растворов (Ge2)1-x(InP)x и (GaAs)1-x-y(Ge2) (ZnSe)y
S Ismailov, A Saidov, A Pazzakov Технологии, Техника, Инженерия” Международный научный журнал 2 (4), 28-30, | 2017 |
Simulation of parameters of nGe-pSiGe diode structures on TCAD SENTAURUS
A Saidov, U Asatova, S Usmanov Actual problems modern science education end training in the region …, | 2017 |
Growing of the (Sn {sub 2}){sub 1-x}(InSb){sub x} epitaxial layers on the GaAs substrate from a liquid phase
AS Saidov, UP Asatova, SK Ismailov
| 2007 |
Growing of the (Sn2)1-x(InSb)x epitaxial layers on the GaAs substrate from a liquid phase
AS Saidov, UP Asatova, SK Ismailov
| 2007 |
Liquid phase epitaxy of solid solutions
AS Saidov, SK Ismailov, UP Asatova
| 2007 |
Band structure of (Ge {sub 2}){sub 1-x}(InP){sub x} solid solution; Ehlektronnaya struktura tverdogo rastvora (Ge {sub 2}){sub 1-x}(InP){sub x}
SK Ismailov, AS Saidov, SJ Karajanov Uzbekiston Fizika Zhurnali 9, | 2007 |
Band structure of (Ge2)1-x(InP)x solid solution
SK Ismailov, AS Saidov, SJ Karajanov Uzbekiston Fizika Zhurnali 9 (1), 18-23, | 2007 |
Optical properties of (Ge2)1−x (InP)x solid solutions
SK Ismailov, AS Saidov, K Durshimbetov, B Zhollybekov Technical physics letters 32, 538-541, | 2006 |
Оптические свойства твердого раствора
ШК Исмаилов, АС Саидов, К Дуршимбетов, Б Жоллыбеков Письма в ЖТФ 32 (12), | 2006 |
Оптические свойства твердого раствора (Ge2)1-x(InP)x
ШК Исмаилов, АС Саидов, К Дуршимбетов, Б Жоллыбеков Письма в Журнал технической физики 32 (12), 63-70, | 2006 |
Zone structure of (Ge2)1-x (InP)x (0<x<1) solid solution
SK Ismailov, AC Saidov, S Karajanov, E Jaksimov
| 2005 |
Some physical properties of semiconductor (Ge {sub 2}){sub 1-x}(InP){sub x} solid solutions; Nekotorye fizicheskie svojstva poluprovodnikovykh tverdykh rastvorov (Ge {sub 2 …
AS Saidov, EA Koshchanov, SK Ismailov, AS Razzakov
| 2004 |
Some physical properties of semiconductor (Ge2)1-x (InP)x solid solutions
AS Saidov, EA Koshchanov, SK Ismailov, AS Razzakov
| 2004 |
Growth of Si-Si {sub 1-x} Ge {sub x}-(Ge {sub 2}){sub 1-x}(InP){sub x} heterostructures from liquid phase; Poluchenie Si-Si {sub 1-x} Ge {sub x}-(Ge {sub 2}){sub 1-x}(InP){sub …
AS Saidov, EA Koshchanov, SK Ismailov, SK Razzakov Uzbekiston Fizika Zhurnali 1, | 2000 |
Growth of Si-Si1-xGex-(Ge2)1-x(InP)x heterostructures from liquid phase
AS Saidov, EA Koshchanov, SK Ismailov, SK Razzakov Uzbekiston Fizika Zhurnali 1 (6), 514-516, | 2000 |
Growth of perfect-crystal Si–Si [sub 1-x] Ge [sub x]–(Ge [sub 2])[sub 1-x](InP)[sub x] structures from the liquid phase.
AS Saidov, ÉA Koshchanov, AS Razzakov, SK Ismailov Technical Physics Letters 25 (12), | 1999 |
Growth of perfect-crystal Si-Si1−x Gex-(Ge2)1−x (InP)x structures from the liquid phase
AS Saidov, EA Koshchanov, AS Razzakov, SK Ismailov Technical Physics Letters 25, 986-987, | 1999 |
Выращивание кристаллически совершенных Si--Si1-xGex--(Ge2)1-x(InP)x структур из жидкой фазы
АС Саидов, ЭА Кошчанов, АШ Раззаков, ШК Исмаилов Письма в Журнал технической физики 25 (24), 37-40, | 1999 |