Ургенчский Государственный Университет-Асатова Умида Палвановна

Ургенчский государственный университет имени Абу Райхана Беруни

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Асатова Умида Палвановна

Физика, Dotsent

umida72@urdu.uz

+998937462757

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Публикации

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Список публикаций на Google Scholar

Article title	Year
Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)1-x-y(Ge2)x(ZnSe)y S Ismailov, D Saparov, A Saidov, U Asatova, S Usmonov IEEE 25th International Conference of Young Professionals in Electron …,	2024
Features of Liquid–Phase Epitaxy of (InSb)1–z(Sn2)z Solid Solutions of Molecular Substitution on GaAs and GaP Substrates S Usmonov, U Asatova, A Akhmedov International Conference on Information Science and Communications …,	2022
Semiconductor solid solutions Ge1-x Snx as a new material for electronics AS Saidov, SK Ismailov, UP Asatova International Conference on Information Science and Communications …,	2021
Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures AS Saidov, AY Leiderman, SN Usmonov, UP Asatova Technical Physics Letters 46, 1124-1127,	2020
FEATURES OF EPITAXY OF THE LAYERS OF SOLID SOLUTIONS (InSb) 1-x (Sn2) x ON GaAs SUBSTRATES A Saidov, S Usmonov, U Asatova Euroasian Journal of Semiconductors Science and Engineering 2 (6), 8,	2020
FEATURES OF THE CURRENT-VOLTAGE CHARACTERISTIC OF n-GaP-p-(InSb) 1-x (Sn2) x HETEROSTRUCTURE AS Saidov, AY Leyderman, SN Usmonov, UP Asatova Euroasian Journal of Semiconductors Science and Engineering 1 (5), 2,	2019
Growing and Studying The Photoelectric and Electrical Properties of Epitaxial Films of Ge1-X Snx Solid Solutions A Saidov, SN Usmonov, U Asatova, SK Ismailov Acta of Turin Polytechnic University in Tashkent 9 (1), 93-100,	2019
Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties AS Saidov, SN Usmonov, UP Asatova Semiconductors 46, 1088-1095,	2012
Thermoelectric properties of nGe-p (InSb){sub 1-x}(Sn {sub 2}) x heterostructures; Termoehlektricheskie svojstva nGe-p (InSb){sub 1-x}(Sn {sub 2}) x geterostruktur AS Saidov, SN Usmonov, UP Asatova Geliotekhnika,	2010
Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy AS Saidov, MS Saidov, SN Usmonov, UP Asatova Semiconductors 44, 938-945,	2010
Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures AS Saidov, SN Usmonov, UP Asatova Applied Solar Energy 46, 104-106,	2010
Growing of the (Sn {sub 2}){sub 1-x}(InSb){sub x} epitaxial layers on the GaAs substrate from a liquid phase AS Saidov, UP Asatova, SK Ismailov	2007
Growing of the (Sn2)1-x(InSb)x epitaxial layers on the GaAs substrate from a liquid phase AS Saidov, UP Asatova, SK Ismailov	2007
Liquid phase epitaxy of solid solutions AS Saidov, SK Ismailov, UP Asatova	2007
Electrical and photoelectrical properties of thin films on base nGaAs -p(Sn)1-x(InSb)x structures AS Saidov, AY Leyderman, HH Ismoilov, U Asatova	2007
Current characteristics of GaAs-(Sn {sub 2}){sub x}(InSb){sub 1-x} heterostructure; Tokovye kharakteristiki GaAs-(Sn {sub 2}){sub x}(InSb){sub 1-x}-geterostruktur AS Saidov, EA Koshchanov, AS Razzakov, UP Asatova	2003
The influence of gamma-radiation on current characteristics of silicon diodes; Kremnijli tugrilovci diod ustunchalari tok khrakteristiklariga gamma-kvantlarni tasiri G Aripov, S Atamuratov, U Asatova	1997
The influence of gamma-radiation on current characteristics of silicon diodes G Aripov, S Atamuratov, U Asatova	1997
The influence of Co {sup 60} quanta on current characteristics of rectifier columns on the base of silicon; Vliyaniya kvantov Co {sup 60} na tokovye kharakteristiki … G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva	1995
The influence of Co60 quanta on current characteristics of rectifier columns on the base of silicon G Aripov, AE Atamuratov, U Asatova, D Kurbanov, K Gummieva	1995
MODELING SOME ELECTRONIC AND OPTICAL PROPERTIES OF Ge1-xSnx SOLID SOLUTION OBTAINED BY LIQUID PHASE EPITAXY METHOD A Saidov, R Chakraborty, U Asatova, S Masharipov, S Usmonov, ... Scientific committee, 93, 0
Current characteristics of GaAs-(Sn2)x(InSb)1-x heterostructure AS Saidov, EA Koshchanov, AS Razzakov, UP Asatova