- University
-
Activity
- Scientific Activity
-
International relations
- International projects and scholarships
- Visa information
- International partner universities
- Internationalization strategy
- Structure of department of International relations
- Directions of the joint educational program
- International conferences and meetings
- Information service
- MCOLE University recruitment
- Visiting scholars
- Start-up procedure
- FINANCIAL ACTIVITIES
- Youth work and spiritual and educational activities
- Information service
- Applicant
-
Students
- BACHELORS
- Providing and redistributing grants to students New
- MASTER DEGREE
- TRANSFER STUDY
-
Doctorate
- 2026-yil uchun oliy ta’limdan keyingi ta’lim institutiga ixtisosliklar bo‘yicha Noyabr oyida bo‘lib o‘tadigan qabul imtihonlari savollari
- Interview results of applicants who submitted documents for independent research for admission to Urgench State University named after Abu Rayhon Beruni in the 2nd quarter of 2025
- Results of qualifying exams in Foreign Language (English, German) for independent researchers and basic doctoral students
- Results of entrance examinations in the specialty of the basic doctorate of Urgench State University
- The results of the 2024 entrance exams for basic doctoral studies, doctoral studies and research trainees at Urganch State University
- A set of questions for admission to basic doctoral study and research internship ( 2024 )
- Doctor's degree results have been announced
- Results of the trainee researchers exam
- Questions of entrance tests for PhD (Doctor of Philosophy) in specialties
- Scientific & Innovative Activities
- International students
Close
-
Call
Center -
Class
schedule -
Videosurveillance
-
Virtual
reception -
Reserve
candidate -
Green
University
“Investigation of plasma parameters formed on the surface of p-type and n-type silicon”
A scientific seminar was held by Matkarimova Shoira Umidbekovna, a doctoral researcher of the Department of Electrical Engineering and Power Engineering at the Faculty of Engineering, on the topic “Investigation of plasma parameters formed on the surface of p-type and n-type silicon.” The relevance of the research is determined by the need to address applied problems in semiconductor technologies, including laser-assisted surface modification, surface cleaning, formation of fine structures, and enhancement of the efficiency of solar cells. The scientific significance of the study lies in identifying differences in plasma parameters formed on p-type and n-type silicon surfaces, which enables the achievement of novel scientific results.